Aalto University team finds beryllium doping can benefit gallium nitride power electronics
Green Car Congress
NOVEMBER 10, 2017
Physicists at Aalto University in Finland, with colleagues in Texas and Poland, have shown that beryllium doping can prove beneficial in gallium nitride (GaN) power electronics. —Professor Filip Tuomisto from Aalto University. The team made a breakthrough in revising methods largely discarded 15 years ago.
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