Transphorm to demonstrate 99% efficiency power switching with a 1200V GaN power transistor at ISPSD 2022
Green Car Congress
FEBRUARY 27, 2022
Our 1200-volt GaN FET will enable excellent performance with greater designability and cost effectiveness than SiC solutions. The 1200V GaN device delivers greater than 99%$ efficiency and performs well against a leading SiC MOSFET of similar on-resistance. We see this as an important milestone for the GaN power electronics industry.
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