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ARPA-E awards $175M to 68 novel clean energy OPEN 2021 projects

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8" GaN-on-Si Super Junction Devices for Next Generation Power Electronics - $4,521,601. The MIT will develop a new generation of power electronics based on vertical gallium nitride (GaN) superjunction diodes and transistors that can vastly exceed the performance of today’s GaN power devices. University of Delaware.

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DOE ARPA-E awards $156M to projects to 60 projects to accelerate innovation in clean energy technologies

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Electric Vehicles, University of Delaware). Content QM Power and its partners will develop a new type of electric. motor with the potential to efficiently power future. Concentrating Solar Power/Nuclear: High Efficiency Solar Electric Conversion Power Tower Abengoa Solar will develop a high efficiency solar-electric.

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