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ARPA-E awards $175M to 68 novel clean energy OPEN 2021 projects

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The MIT will develop a new generation of power electronics based on vertical gallium nitride (GaN) superjunction diodes and transistors that can vastly exceed the performance of today’s GaN power devices. Massachusetts Institute of Technology. 8" GaN-on-Si Super Junction Devices for Next Generation Power Electronics - $4,521,601. UC Berkeley.

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