Transphorm to demonstrate 99% efficiency power switching with a 1200V GaN power transistor at ISPSD 2022
Green Car Congress
FEBRUARY 27, 2022
Early results show notably low leakage with a breakdown voltage of greater than 1400 volts. Our 1200-volt GaN FET will enable excellent performance with greater designability and cost effectiveness than SiC solutions. We see this as an important milestone for the GaN power electronics industry.
Let's personalize your content